Semiconductor device having a high current gain and a higher GE

Details Semiconductor device having a high current gain and a higher GE Semiconductor device having a high current gain and a higher GE

1989-12-08

1992-10-27

Mintel, William

357 16, 357 30, 357 35, H01L 2972

Patent

active

051594242

ABSTRACT:
A semiconductor device comprises at least an emitter region of a first conductivity type, a base region of a second conductivity type, and a collector region of a first conductivity type. The base region essentially consists of Si.sub.1-X Ge.sub.X (0<X<1), further comprises regions formed in a depletion layer close to an interface between the base region and the collector region or in the collector region and in a depletion layer close to an interface between the base region and the emitter region or in the emitter region, and has a larger Ge amount at the base region side and a smaller Ge amount at the emitter and collector sides.

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