Nonvolatile memory

Details Nonvolatile memory Nonvolatile memory

1981-11-25

1983-08-30

Fears, Terrell W.

Static information storage and retrieval

Floating gate

Particular biasing

365189, 357 23, G11C 1140

Patent

active

044020643

ABSTRACT:
A nonvolatile memory, especially an electrically erasable and programmable read only memory (EE-PROM) includes an array of memory cells. In each of the memory cells four transistors are formed, that is a read transistor and a first selecting transistor connected in series, and a write-erase transistor and a second selecting transistor connected in series. The write-erase transistor has a floating gate partially provided with a thin insulation layer thereunder. The read transistor also has a floating gate provided with a thick insulation layer thereunder. The first and second selecting transistors are turned to ON or OFF together.

REFERENCES:
patent: 4330850 (1982-05-01), Jacobs et al.

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