Method for in-situ determination of the fermi level in GaAs and

Details Method for in-situ determination of the fermi level in GaAs and Method for in-situ determination of the fermi level in GaAs and

1990-08-03

1992-10-27

Rosenberger, Richard A.

Optics: measuring and testing

By shade or color

With color transmitting filter

356432, G01N 2125

Patent

active

051594102

ABSTRACT:
A method for in-situ determination by photoreflectance of the Fermi level (V.sub.F) at the surfaces or interfaces of GaAs and related materials, in which a probe beam of monochromatic light and a modulated pump beam from a pump source are directed onto a sample, and the measured barrier height V.sub.m =V.sub.F -V.sub.S is obtained from the information in the reflected light, where V.sub.S represents the surface voltage effects on the sample by the photoreflectance, whereby V.sub.m approaches V.sub.F as V.sub.S approaches zero during repeated tests in which a parameter such as temperature affecting the numerical value of V.sub.S is changed until there is flattening of the curve illlustrating V.sub.m as a function of the parameter.

REFERENCES:
patent: 4953983 (1990-09-01), Bottka et al.

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