Composite MOS/bipolar power device

Details Composite MOS/bipolar power device Composite MOS/bipolar power device

1981-01-12

1983-08-30

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 13, 357 46, 357 51, 357 86, 357 23, 307304, 307318, H01L 5702

Patent

active

044020031

ABSTRACT:
A merged MOS/bipolar structure for high current device applications. Using the same process sequence both an MOS device as a bipolar device are formed in a single semiconductor substrate. Integral input circuitry means couples the input terminals of the individual devices to the composite input terminal to control the relative currents carried by the individual devices as a function of the input signal.

REFERENCES:
patent: 3553541 (1971-01-01), King
patent: 4057844 (1977-11-01), Smedly
patent: 4143391 (1979-03-01), Suzuki
patent: 4255671 (1981-03-01), Nonaku

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