Patent
1978-01-12
1983-08-30
James, Andrew J.
357;91, 29580, H01L 2974, H01L 2906
Patent
active
044020015
ABSTRACT:
A semiconductor element such as a thyristor or a transistor which is capable of withstanding a high voltage comprises a semiconductor substrate of a pnpn-four layer structure (for a thyristor) or of a npn-three layer structure (for a transistor). An intermediate p-type layer is composed of a low concentration layer region located adjacent to an n-type layer and a high concentration layer region located adjacent to the other n-type layer. The high concentration layer region is formed through diffusion of aluminium so that the maximum concentration thereof becomes at least equal to 5.times.10.sup.16 atoms/cm.sup.3. A method of manufacturing such semiconductor element is also disclosed.
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Momma Naohiro
Taniguchi Hiroyuki
Hitachi , Ltd.
James Andrew J.
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