Method for fabricating shallow isolation trenches using angular

Details Method for fabricating shallow isolation trenches using angular Method for fabricating shallow isolation trenches using angular

1998-05-14

1999-07-06

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438427, 438430, H01L 2968, G03C 500, G03F 900

Patent

active

059207868

ABSTRACT:
The present invention provides a method of constructing trenches for use in microelectronic circuit structures. A photolithographic method is used to create trenches with sloped walls shaping the photoresist masks into sloped profiles. These photoresist masks effectively shape the underlying substrate during subsequent etch steps producing sloped wall trenches. These trenches can be used as shallow trench isolation structures to isolate microelectronic circuit structures from each other.

REFERENCES:
patent: 4487652 (1984-12-01), Almgren
patent: 4904564 (1990-02-01), Chiong
patent: 5010378 (1991-04-01), Douglas
patent: 5384159 (1995-01-01), Stolmeijer
patent: 5635335 (1997-06-01), Bae et al.
patent: 5656414 (1997-08-01), Chou et al.
patent: 5683931 (1997-11-01), Takahashi
patent: 5750441 (1998-05-01), Figura et al.
patent: 5753417 (1998-05-01), Urlich
patent: 5843600 (1997-07-01), Chu et al.

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