Semiconductor laser

Details Semiconductor laser Semiconductor laser

1997-11-14

1999-07-06

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

059205865

ABSTRACT:
A semiconductor laser includes a first conductivity type semiconductor substrate; a first conductivity type lower cladding layer, an active layer, and a second conductivity type first upper cladding layer, disposed in this order on the first conductivity type semiconductor substrate; a second conductivity type current confinement layer disposed on the first upper cladding layer, made of a semiconductor material containing a higher composition ratio of Al than the first upper cladding layer and having a stripe shape with a width and extending in a direction; and a second conductivity type second upper cladding layer made of the same material as the first upper cladding layer, disposed on the current confinement layer so that a central longitudinal axis of the current confinement layer is located directly opposite a central longitudinal axis of the current confinement region, and having a ridge structure with a bottom surface facing the first upper cladding layer, in contact with, and having a width larger than the current confinement layer, the grooves limiting the area in which current can flow between the lower cladding layer and the first upper cladding layer, eliminating leakage current that is not effective in generating light.

REFERENCES:
patent: 5493577 (1996-02-01), Choquette et al.
patent: 5696784 (1997-12-01), Srinivasan et al.

Affiliated with

Also associated with

Rating

Semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-905076