Static information storage and retrieval – Floating gate – Particular biasing
Patent
1997-07-03
1999-07-06
Nelms, David
Static information storage and retrieval
Floating gate
Particular biasing
36518513, 36518533, 36518523, G11C 1606
Patent
active
059205091
ABSTRACT:
By setting full group reversal control gates to a logical voltage "H", memory cells on all bit lines of a memory cell array block are connected to a reversal voltage supply circuit so that a group reversal operation is performed. When one of the group reversal control gates is set to the logical voltage "H", the memory cells on the bit lines having either even or odd numbers of the memory cell array block are connected to the reversal voltage supply circuit so that a partial group reversal operation is performed. When one of column selection gates is set to the logical voltage "H", the selected bit line is connected to the reversal voltage supply circuit. Consequently, a line reversal operation for the memory cell connected to the selected bit line is performed. Thus, the high-speed reversal operation which fully controls the offleak current of the memory cell can be implemented and the low-voltage operation can be realized by changing the operation unit for performing the reversal operation.
REFERENCES:
patent: 5233562 (1993-08-01), Ong et al.
patent: 5388069 (1995-02-01), Kokubo
patent: 5422846 (1995-06-01), Chang et al.
patent: 5546340 (1996-08-01), Hu et al.
patent: 5568419 (1996-10-01), Atsumi et al.
patent: 5576991 (1996-11-01), Radjy et al.
patent: 5608672 (1997-03-01), Tang et al.
Communication from European Patent Office and attached Search Report, Aug. 25, 1998.
Hirano Hiroshige
Honda Toshiyuki
Matsushita Electric - Industrial Co., Ltd.
Nelms David
Tran Andrew Q.
LandOfFree
Nonvolatile semiconductor memory device capable of conditioning does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device capable of conditioning , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device capable of conditioning will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-904413