Method and apparatus for evaluating surface and subsurface featu

Details Method and apparatus for evaluating surface and subsurface featu Method and apparatus for evaluating surface and subsurface featu

1987-07-23

1989-08-08

Rosenberger, Richard A.

Optics: measuring and testing

For light transmission or absorption

356445, G01N 2141, G01N 2500

Patent

active

048547107

ABSTRACT:
A method and apparatus are disclosed for evaluating surface and subsurface features in a semiconductor sample. In operation, a periodic energy source is applied to the surface of the semiconductor sample to generate a periodic electron-hole plasma. This plasma interacts with features in the sample as it diffuses. The plasma affects the index of refraction of the sample and the changing plasma density is monitored using a radiation probe. In the preferred embodiment, the radiation probe measures the plasma induced periodic changes of reflectivity of the surface of the sample to yield information about the sample, such as ion dopant concentrations, residue deposits and defects.

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