Application of grown oxide bumper insulators to a high-speed VLS

Details Application of grown oxide bumper insulators to a high-speed VLS Application of grown oxide bumper insulators to a high-speed VLS

1982-04-05

1983-08-30

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29591, 148187, H01L 2124

Patent

active

044008660

ABSTRACT:
A semiconductor structure and particularly a high-speed VLSI self-aligned Schottky Metal Semi-Conductor Field Effect Transistor having a relatively high operating frequency and low series resistance, predicated upon very controllable small structure geometries made by the growth of oxide bumper insulators on either side of the schottky barrier. The oxide bumpers width is relatively thicker than the depth of the initial silicon dioxide layer on the substrate surface thereby providing effective separation of the gate from the source and drain respectively. Accordingly, spatial separations between the self-aligned gate-and-drain and gate-and-source can be relatively very closely controlled by varying the doping level of an intermediate polysilicon layer thereby providing controllable differential polysilicon oxidation rates for the bumpers. Thus, the series resistance can be controlled to be relatively low thereby providing a VLSI SASMESFET device that can be operated at relatively high speeds.

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patent: 4282647 (1981-08-01), Richman
Field, "Picosecond Diode Takes a 450-Volt Jolt", Electronic Design, Oct. 25, 1967, pp. 40-42.

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