Method of producing a semiconductor laser

Details Method of producing a semiconductor laser Method of producing a semiconductor laser

1987-11-30

1989-05-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG17, 148DIG56, 148DIG95, 148DIG118, 437133, 437946, 437939, 156612, 357 17, H01L 700, H01L 21208

Patent

active

048290238

ABSTRACT:
A method for producing a semiconductor laser including successively growing at least two semiconductor layers simultaneously on a substrate, the finally grown layer not containing aluminum and the layer grown immediately before the finally grown layer containing aluminum, etching a stripe groove through the finally grown layer to expose part of the semiconductor layer containing aluminum, growing a second semiconductor layer not including aluminum on the finally grown layer and the exposed surface of the semiconductor layer containing aluminum, and growing a semiconductor layer including aluminum on the second semiconductor layer not containing aluminum.

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patent: 4169997 (1979-10-01), Logan et al.
patent: 4190813 (1980-02-01), Logan et al.
patent: 4269635 (1981-05-01), Logan et al.
patent: 4567060 (1986-01-01), Hayakawa et al.
patent: 4734385 (1988-03-01), Mihashi et al.
Mihashi et al., "A Novel Self--Aligned AlGaAs Laser with Bent Active Layer Grown by MOCVD", Tech, Dig. of The International Electron Devices Meeting, Wash. DC., 1st-4th, Dec. 1985, pp. 646-649, IEEE, N.Y.
"A Novel Self--Aligned Laser with Small Astigmatism Grown by MO--CVD", 17th Conf. On Solid State Devices and Materials, Tokyo, 1985, pp. 63 to 66.

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