Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1992-03-10
1993-05-25
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257302, 257303, 257304, 257308, 257403, H01L 2968, H01L 2910, H01L 2101
Patent
active
052142965
ABSTRACT:
A thin-film semiconductor device having a vertical TFT which includes a gate insulating film formed on a sidewall of a throughhole formed in an insulating layer; a thin-film semiconductor layer formed on the gate insulating film; and a gate electrode formed within the insulating layer. The gate electrode, the gate insulating film, and the thin-film semiconductor layer together form a lateral MOS structure. The thin-film semiconductor layer is connected to a bit line at the bottom of the throughhole and to a storage node of a capacitor formed over the switching transistor.
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patent: 4974060 (1990-11-01), Oshsawara
patent: 5016070 (1991-05-01), Sundaresan
"A Surrounding Gate transfer (SCT) cell for 64/256 Mbit Drams", by K. Sunouchi et al. pp. 23-26, (1989) 1989 IEEE, IEDM 89.
"3-Dimensional Stacked Capacitor Cell for 16m and 64m Drams" by T. Emu et al. pp. 592-595 (1988) 1988 IEEE, IEDM88.
Matsumoto Susumu
Matsuo Naoto
Nakata Yoshiro
Okada Shozo
Yabu Toshiki
James Andrew J.
Matsushita Electric - Industrial Co., Ltd.
Ngo Ngan
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