Stress-free chemo-mechanical polishing agent for II-VI compound

Details Stress-free chemo-mechanical polishing agent for II-VI compound Stress-free chemo-mechanical polishing agent for II-VI compound

1991-11-04

1992-10-27

Smith, James G.

Abrasive tool making process, material, or composition

Impregnating or coating an abrasive tool

51317, 156636, B24B 100

Patent

active

051578760

ABSTRACT:
In the present invention STRESS-FREE CHEMO-MECHANICAL POLISHING AGENT FOR II-VI COMPOUND SEMICONDUCTOR SINGLE CRYSTALS AND METHOD OF POLISHING, a II-VI compound semiconductor single crystal wafer is polished smooth to within 50 angstroms by using a mixture of water, colloidal silica and bleach including sodium hypochlorite applied under time and pressure control to achieve chemo-mechanical polishing. Many such compound crystals are not susceptible to polishing by prior art methods.

REFERENCES:
patent: 3841031 (1974-10-01), Walsh
patent: 3979239 (1976-09-01), Walsh
patent: 4428795 (1984-01-01), Kohl et al.
patent: 4448634 (1984-05-01), Lampert
patent: 4475981 (1984-10-01), Rea
patent: 4588421 (1986-05-01), Payne

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