1988-05-03
1989-03-14
Wojciechowicz, Edward J.
357 4, 357 234, 357 236, 357 34, 357 49, 357 50, 357 59, 357 68, 357 71, 357 67, H01L 2906
Patent
active
048128945
ABSTRACT:
A semiconductor device includes a first insulation film formed on a monocrystalline substrate and having an opening, a monocrystalline semiconductor layer formed so as to protrude into the first insulation film, and a conductive layer formed in contact with the side section of the monocrystalline semiconductor layer and extending over a second insulation film formed on the monocrystalline semiconductor layer.
REFERENCES:
patent: 4418468 (1983-12-01), Vora et al.
patent: 4512075 (1984-04-01), Vora
patent: 4571817 (1986-02-01), Birritella et al.
Hayashida Tetsuya
Homma Noriyuki
Kure Tokuo
Nakamura Tohru
Nakazato Kazuo
Hitachi , Ltd.
Wojciechowicz Edward J.
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