Method and apparatus for forming interconnection pattern and sem

Details Method and apparatus for forming interconnection pattern and sem Method and apparatus for forming interconnection pattern and sem

1992-01-31

1993-05-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437187, 437228, 437245, H01L 21283, H01L 21302

Patent

active

052139964

ABSTRACT:
Disclosed is a method of forming an interconnection pattern which causes no disconnection even when making contact with water in the atmosphere. An interconnection layer is formed on a semiconductor substrate. The interconnection layer is selectively etched by employing a halogen-type gas, to form an interconnection pattern. Ultraviolet rays are directed onto the interconnection pattern in the atmosphere including a hydrogen gas. This method avoids generation of hydrogen halogenide which causes corrosion of metal interconnections even when the metal interconnections make contact with water in the atmosphere, thereby to prevent disconnections of the metal interconnections.

REFERENCES:
patent: 4643799 (1987-02-01), Tsujii et al.
patent: 4682054 (1987-07-01), McLaughlin
patent: 4715921 (1987-12-01), Maher et al.
patent: 4825808 (1989-05-01), Takahashi et al.
patent: 5017513 (1991-05-01), Takeuchi
patent: 5030852 (1991-07-01), Higashisaka
1985 Dry Process Symposium, "Si Surface TGreatment Using Deep UV Irradiation", Ikawa et al., Oct. 1985, pp. 25-29.

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