Fabricating a semiconductor device with buried oxide

Details Fabricating a semiconductor device with buried oxide Fabricating a semiconductor device with buried oxide

1985-08-19

1988-01-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437 61, 437233, 437238, H01L 2176

Patent

active

047176776

ABSTRACT:
Base-collector capacitance is reduced in a semiconductor device by making use of a buried oxide that is self-aligned to an active region of the semiconductor device. Use of the buried oxide provides a means for down-scaling or shrinking of the active device region which in turn increases the speed of the device. In addition, the area above the buried oxide is built up to reduce the resistance in the active region.

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Ghandhi, S. K. "VLSI Fabrication Principles", 1983, pp. 214, 215, 284, 285.

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