Semiconducting metal silicide radiation detectors and source

Details Semiconducting metal silicide radiation detectors and source Semiconducting metal silicide radiation detectors and source

1986-09-30

1988-11-01

Carroll, J.

357 17, 357 19, 357 29, 357 67, 357 71, 350 961, 350 9615, 350 9620, 350 9622, 350 9624, H01L 2714, H01L 3300, G01T 124

Patent

active

047823771

ABSTRACT:
Semiconducting metal silicide electromagnetic radiation sources and detectors have a thin film of semiconducting metal silicide grown or deposited on a silicon wafer. The metals are chosen from a group consisting of iron, iridium, manganese, chromium, rhenium, barium, calcium, magnesium and osmium. The detectors are intrinsic semiconductors and can be formed either as discrete devices, or monolithically on a silicon chip to provide an integrated detector or detector array. The semiconducting metal silicide devices are efficient detectors at wavelengths which mate with the transmission capabilities of certain optical fibers enhancing the combination of infra-red detectors and optical fiber transmission preveously known. Iron disilicide is useful as an infra-red radiation source and as an extrinsic detector as well.

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Murarka, "Refractory Silicides for Integrated Circuits", J. Vac. Sci. Technol. 17(4); Jul./Aug. 1980.

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