Method for preparing a thin film amorphous silicon having high r

Details Method for preparing a thin film amorphous silicon having high r Method for preparing a thin film amorphous silicon having high r

1981-07-29

1984-04-10

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

357 2, 357 4, 427 38, 427 39, 427 86, C23C 1500

Patent

active

044419732

ABSTRACT:
A semiconductor film is prepared by a method wherein a substrate is first disposed as one electrode within a reaction chamber. A supply of semiconductor material is fed into the reaction chamber as the other electrode while introducing a fluoride semiconductor material into said reaction chamber. A high frequency electric field is generated within the reaction chamber to ionize the semiconductor material and decompose the fluoride of the semiconductor material, whereby an amorphous semiconductor film is deposited on the substrate.

REFERENCES:
patent: 4196438 (1980-04-01), Carlson
patent: 4225222 (1980-09-01), Kempter
patent: 4226898 (1980-10-01), Ovshinsky
patent: 4292343 (1981-09-01), Plaettner
Matsumura et al., Applied Phys. Letters; vol. 26, Mar. 15, 1980, pp. 445-446.

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