Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Ordered or disordered
Patent
1997-04-23
1999-07-27
Niebling, John F.
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Ordered or disordered
438160, 438166, M01L 2100, M01L 2184
Patent
active
059305916
ABSTRACT:
In a method of fabricating a high resolution low voltage flat panel radiation imaging sensor having a radiation transducer having a radiation conversion layer of amorphous semiconductor and an electrode on one side thereof and an array of pixels arranged in rows and columns on an opposite side thereof, each pixel including a pixel electrode and storage capacitor and a charge readout device connected to the pixel electrode and the storage capacitor, the improvement comprising the step of shining light on selected regions of the radiation conversion layer which are aligned with the pixel electrodes to thereby crystallize the regions, resulting in a plurality of low resistivity and high charge mobility crystallized regions where the semiconductor material has been exposed to the light surrounded by high resistivity and low charge mobility regions where the semiconductor material has not been exposed to the light, for preventing lateral charge diffusion between respective ones of the low resistivity and high charge mobility regions.
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Lebentritt Michael S.
Litton Systems (Canada) Limited
Niebling John F.
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