Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1981-03-04
1984-04-10
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148188, 29571, 29576B, 29576W, 29578, H01L 2122
Patent
active
044419414
ABSTRACT:
A method for element isolation utilizing insulating materials on a semiconductor substrate in which an oxidizable material layer of polycrystalline silicon or the like is formed overlying the substrate surface, the oxidizable material layer disposed at the element-isolation-forming regions is oxidized using an oxidation mask, the oxidation mask is removed and, if necesary at least part of the unoxidized oxidizable material below the mask is removed. Predetermined processes such as oxidation and diffusion are performed thereafter to form semiconductor elements such as MOS transistors and bipolar transistors with high packaging density and reliability.
REFERENCES:
patent: 3752711 (1973-08-01), Kooi et al.
patent: 3943542 (1976-03-01), Ho et al.
patent: 3970486 (1976-07-01), Kooi
patent: 4037309 (1977-07-01), Smith
patent: 4054989 (1977-10-01), Ho et al.
patent: 4080718 (1978-03-01), Richman
patent: 4127931 (1978-12-01), Shiba
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4282647 (1981-08-01), Richman
patent: 4292091 (1981-09-01), Togei
"Local Oxidation of Silicon and Its Application in Semiconductor-Device Technology," J. A. Appels et al., Philips Res. Repts. 25, pp. 118-132, 1970.
Ozaki G.
Tokyo Shibaura Denki Kabushiki Kaisha
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