Method of forming a waveguide for a DFB laser using photo-assist

Details Method of forming a waveguide for a DFB laser using photo-assist Method of forming a waveguide for a DFB laser using photo-assist

1987-11-12

1988-11-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG48, 148DIG95, 148DIG143, 148DIG119, 156613, 427 531, 437133, 437173, 437936, 437942, 437963, H01S 319, H01L 21208

Patent

active

047820357

ABSTRACT:
A method for producing a semiconductor laser comprising depositing a first semiconductor layer comprising n-type InP on an n-type InP substrate, depositing a diffraction grating of InGaAsP which includes or excludes doping impurities on the first semiconductor layer with irradiating interference fringes by a light excitation crystalline growth means, and burying a portion of the diffraction grating with InGaAsP including or excluding doping impurities with irradiating interference fringes reverse in light and darkness from said interference fringes used in depositing the diffraction grating.

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Ehrlich et al., "Spatially Delineated Growth of Metal Films via Photochemical Prenucleation," Appl. Phys. Lett., 38(11), 1 Jun. 1981, pp. 946-948.
Allen et al., "Direct Writing Using Laser Chemical Vapor Deposition", Mat. Res. Soc. Symp. Proc., vol. 17 (1983), pp. 2-9.
"Reflectance and Luminescense of GaAs", J. Appl. Phys., vol. 43, No. 5, May 1972, pp. 2327-2335.

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