Base clipping process for a solid state photosensitive device

Details Base clipping process for a solid state photosensitive device Base clipping process for a solid state photosensitive device

1984-12-21

1987-08-04

Miller, Stanley D.

Electrical pulse counters, pulse dividers, or shift registers: c

Charge transfer device

Particular input or output means

35821326, H03K 2346

Patent

active

046851178

ABSTRACT:
A method of operating a solid state photodetector device which has N photodetectors formed on a first substrate portion connected to a readout stage, through a transition zone having at least one storage zone and a transfer gate, and a multiplexer of the charges transfer type which are on a second substrate portion. The second substrate portion is biased to a voltage which is negative with respect to that of the first substrate portion. Then, after integration of the charges from the photodetectors and tansfer thereof into the multiplexer in the usual way by leaving a charge Qo in the storage zone, the transfer gate is biased so that the voltage under this gate is less than the biasing voltage of the first substrate portion. Then the gate in the storage zone is biased so that the potential under this gate is between the bias voltage of the first substrate portion and the potential under the transfer gate so as to remove the charge Qo.

REFERENCES:
patent: 3969634 (1976-07-01), Su et al.
patent: 4001501 (1977-01-01), Weimer
patent: 4139784 (1979-02-01), Sauer
patent: 4375597 (1983-03-01), Kosonocky
patent: 4506299 (1985-03-01), Berger et al.
patent: 4611234 (1986-09-01), Berger et al.
IEEE Transactions on Electron Devices, vol. ED-29, No. 1, Jan. 1982, pp. 3-13, New York (USA); K. Chow et al.; "Hybrid Infrared . . . ".
Patents Abstracts of Japan, vol. 7, No. 251 (E-209) (1396), Nov. 8, 1983; & JP-A-58 139465 (Matsushita Denki Sangyo K.K.) (8-18-83).
1978 IEEE International Electron Devices Meeting, Technical Digest, Washington, 406 Dec. 1978, pp. 517-521, New York, (USA); P. Felix et al.

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