Content addressable memory with flag storage to indicate memory

Details Content addressable memory with flag storage to indicate memory Content addressable memory with flag storage to indicate memory

1988-12-12

1990-12-04

Gossage, Glenn

Static information storage and retrieval

Associative memories

Ferroelectric cell

36518901, 364200, 364900, G11C 1500

Patent

active

049758730

ABSTRACT:
A content addressable memory device capable of correct retrieval operation comprises a flag bit column (12) provided in a memory cell array. The flag bit column (12) stores a flag signal indicating whether a word is in a data written state or an empty state for each word in a data array (2). In the retrieval operation, the data written in the data array (2) and a flag bit column (12) are simultaneously retrieved, providing a correct retrieval result. In addition, since the flag bit column (12) is provided in the memory cell array, it can be controlled in a manner similar to controlling the data array (2).

REFERENCES:
patent: 4670858 (1987-06-01), Almy
patent: 4888731 (1989-12-01), Chuang et al.
T. Ogura et al., "A 4 kb Associative Memory LSI", 55083-78, pp. 45-52.
C. V. Ramamoorthy et al., "A Design of a Fast Cellular Associateive Memory for Ordered Retrieval", pp. 800-815, IEEE Trans. on Computers, vol. C-27, No. 9, Sep. 1978, pp. 800-815.
Hiroshi Kadota et al., "An 8-Kbit Content-Addressable and Reentrant Memory", IEEE Journal of Solid State Circuits, Oct. 1985, vol. SC-20, No. 5, pp. 951-956.
J. Of Institute of Electronics: "4 Kb Associative Memory LSI", by Takeshi Ogura et al., Dec. 1983, pp. 45-52.
IEEE Transactions on Computers: "A Design of a Fast Cellular Associative Memory of Ordered Retrieval", by C. V. Ramamoorthy et al., vol. C-27, No. 9, 9/78, pp. 800-815.
IEEE J. of Sol.-St. Circuits: "An 8-kbit Content-Addressable and Reentrant Memory", by H. kadota et al., vol. SC-20, No. 5, Oct. 1985, pp. 951-956.

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