Trench sidewall patterned by vapor phase etching

Details Trench sidewall patterned by vapor phase etching Trench sidewall patterned by vapor phase etching

1997-05-29

1998-11-17

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257301, H01L 27108

Patent

active

058380558

ABSTRACT:
Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.

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T.K. Whidden et al.; Catalyzed HF Vapor Etching of Silicon Dioxide for Micro-and Nanolithographic Masks; J. Electrochem. Soc., vol. 142, No. 4, Apr. 1995; pp. 1199-1205.

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