Method of manufacturing high-quality semiconductor light-emittin

Electricity: measuring and testing – Determining nonelectric properties by measuring electric... – Semiconductors for nonelectrical property

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324158R, 324158D, 356237, 356121, 250234, G01N 2700, G01J 100, H01J 314

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046848835

ABSTRACT:
A nondestructive method is proposed for measuring stripe dimensions in order to grade light-emitting structures such as lasers. The width of the near-field emission parallel to the stripe is measured while the laser is operating below threshold. This measurement is correlated with the actual stripe width and with the possibility of kinks developing in the light output. The width of the far-field emission perpendicular to the junction plane can also be measured, and the product of the two widths can be correlated with the stripe area and the possibility of kinks in the laser output.

REFERENCES:
patent: 4002975 (1977-01-01), Erickson et al.
patent: 4063103 (1977-12-01), Sumi
patent: 4160598 (1979-07-01), Firester et al.
T. L. Paoli, "Nonlinearities in the Emission Characteristics of Stripe-Geometry (AlGa) As Double-Heterostructure Junction Lasers", IEEE Journal of Quantum Electronics, vol. QE-12, No. 12, Dec. 1976, pp. 770-776.
H. C. Casey, Jr. et al, Heterostructure Lasers, Part B, Academic Press, 1978, pp. 207-217 and 240-242.
E. Oomura et al, "Transverse Mode Control in InGaAsP/InP Buried Crescent Diode Lasers", Electronics Letters, vol. 17, No. 1, Jan. 8, 1981, pp. 83-84.
D. Botez, "InGaAsP/InP Double-Heterostructure Lasers: Simple Expressions for Wave Confinement, Beamwidth, and Threshold Current over Wide Ranges in Wavelength (1.1-1.65 .mu.m)," IEEE Journal of Quantum Electronics, vol. QE-17, No. 2, Feb. 1981, pp. 178-186.
K. Mizuishi et al, "Reliability of InGaAsP/InP Buried Heterostructure 1.3 .mu.m Lasers," IEEE Journal of Quantum Electronics, vol. QE-19, No. 7, Jul., 1983, pp. 1294-1301.
N. K. Dutta et al, "Criterion for Improved Linearity of 1.3 .mu.m InGaAsP-InP Buried-Heterostructure Lasers", Journal of Lightwave Technology, vol. LT-2, No. 2, Apr. 1984, pp. 160-164.

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