IGFET with partial planar oxide

Details IGFET with partial planar oxide IGFET with partial planar oxide

1977-07-27

1980-01-29

Larkins, William D.

357 50, 357 52, 357 54, H01L 2978

Patent

active

041864085

ABSTRACT:
The invention is a process of fabricating semiconductor devices including an insulating film across the surface that has a planar configuration. Alternatively, the film may be of uniform thickness and non-planar configuration. Both the planar and uniform thickness characteristics of the insulating film permit openings to be formed therein without over etching a defined surface area and conductors to be formed thereon without broadening. An important feature of the invention is utilizing the differential growth rate of films on semiconductor surfaces and/or selection of a suitable initial film thickness as a diffusion mask. The initial film thickness also contributes to a planar or uniform film thickness or other configuration across the device.

REFERENCES:
patent: 3404451 (1968-10-01), So
patent: 3676921 (1972-07-01), Kooi
patent: 4043848 (1977-08-01), Bazin

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