Heterojunction avalanche diode with a ternary alloy of gallium,

Details Heterojunction avalanche diode with a ternary alloy of gallium, Heterojunction avalanche diode with a ternary alloy of gallium,

1978-07-31

1980-01-29

Edlow, Martin H.

357 16, 357 30, 357 61, H01L 2990

Patent

active

041864077

ABSTRACT:
An avalanche diode comprising a semiconducting heterojunction (Ga.sub.x In.sub.1-x As/InP) intended to oscillate as an "IMPATT" diode. It comprises a substrate of n.sup.+ doped monocrystalline InP supporting a series of three layers which are formed by epitaxy and of which the monocrystalline latices match one another namely an InP layer with n-type doping and two layers of Ga.sub.x In.sub.1-x As (best mode: Ga.sub.0.47 In.sub.0.53 As) with n-type and p.sup.+ -type doping respectively, these two layers being of minimal thickness. When a backward bias is applied to the p.sup.+ n-junction, the avalanche phenomenon takes place in the thin n-type layer of ternary alloy.

REFERENCES:
patent: 3982261 (1976-09-01), Antypas
patent: 4017332 (1977-04-01), James
patent: 4075651 (1978-02-01), James
patent: 4083062 (1978-04-01), Ohuchi

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