Substrate bias generator for semiconductor integrated circuit de

Details Substrate bias generator for semiconductor integrated circuit de Substrate bias generator for semiconductor integrated circuit de

1997-01-28

1999-07-27

Cunningham, Terry D.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327537, G05F 110

Patent

active

059296933

ABSTRACT:
The semiconductor integrated circuit device can control the threshold voltage of MOSFETs at a low value while keeping the variation thereof at a small level in operation mode, but switches the threshold voltage thereof from the low value to a high value in standby mode. The semiconductor integrated circuit device comprises: a detecting circuit for detecting a physical quantity (e.g., substrate bias) of a semiconductor substrate and for outputting n-units (n.gtoreq.2) of first to n-th output signals decided according to a region to which the detected physical quantity belongs, the region being decided separately on the basis of n-units of the first to n-th set values; a control circuit for outputting drive signals on the bias of a control signal and the first to n-th output signals of the detecting circuit; a substrate potential generating circuit activated on the basis of one of the drive signals of the control circuit, to allow the substrate bias to be deep by pumping out charges from the semiconductor substrate; and a substrate charge injecting circuit activated on the basis of the other of the drive signals of the control circuit, to allow the substrate bias to be shallow by injecting charges to the semiconductor substrate.

REFERENCES:
patent: 4769784 (1988-09-01), Doluca et al.
patent: 5546044 (1996-08-01), Calligaro et al.
patent: 5642072 (1997-06-01), Miyamoto et al.
Yoo, et al. "Variable V.sub.cc Design Techniques for Battery-Operated DRAMs." IEICE Transactions on Electronics E76-C (1993) May, No. 5, Tokyo; pp. 839-843.

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