Fishing – trapping – and vermin destroying
Patent
1985-10-07
1987-08-04
Roy, Upendra
Fishing, trapping, and vermin destroying
148DIG165, 357 91, 437247, 437 8, H01L 21265, H01L 2702
Patent
active
046844139
ABSTRACT:
A method for decreasing the turnoff time in a crystalline semiconductor region within a semiconductor device comprises initially providing a semiconductor region having a predetermined density of pinning centers. The semiconductor region is then irradiated so as to yield crystal damage that is equivalent to or greater than that which would be produced by irradiating with 1 MeV neutrons at a fluence greater than approximately 10.sup.13 cm.sup.-2. The region is then annealed at a temperature of approximately 350.degree. to 450.degree. C. for approximately 15 minutes to one hour so as to yield a density of stable recombination centers correlating with the pinning centers that provides a stable minority carrier lifetime within the semiconductor region.
REFERENCES:
patent: 4135951 (1979-01-01), Stone
patent: 4234355 (1980-11-01), Meinders
patent: 4240844 (1980-12-01), Felice et al.
patent: 4328610 (1982-05-01), Thompson et al.
patent: 4506436 (1985-03-01), Bakeman, Jr. et al.
patent: 4521256 (1985-06-01), Hiraki et al.
"Neutron Irradiation for Prevention of Latch-Up in MOS Integrated Circuits", J. R. Adams et al., IEEE Transactions on Nuclear Science, vol. NS-26, No. 6, Dec. 1979, pp. 5069-5073.
"Neutron Damage in PIN Diode Phase Shifters for Radar Arrays", G. J. Brucker et al., IEEE Transactions on Nuclear Science, vol. NS-25, No. 6, Dec. 1978, pp. 1528-1533.
"Improved COMFETs With Fast Switching Speed and High-Current Capability", A. M. Goodman et al., Proceedings of the IEEE International Electron Devices Meeting, Dec. 1983, pp. 79-82.
Komaleeva et al., Sov. Phys. Semiconduct., 10 (Feb. 1976) 191.
Guldberg, J. Phys. D Appl. Phys., 11 (1978) 2043.
Spour, IEEE Trans. Nucl. Sc., NS-20 (1973) 190.
Goodman Alvin M.
Goodman Lawrence A.
Robinson Paul H.
Russell John P.
Glick Kenneth R.
Morris Birgit E.
Plantz Bernard F.
RCA Corporation
Roy Upendra
LandOfFree
Method for increasing the switching speed of a semiconductor dev does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for increasing the switching speed of a semiconductor dev, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for increasing the switching speed of a semiconductor dev will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-882452