Field effect transistor with nitride compound

Details Field effect transistor with nitride compound Field effect transistor with nitride compound

1997-12-03

1999-07-27

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257195, 257410, 257411, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

059294671

ABSTRACT:
A GaN-type field effect transistor exhibits a large input amplitude by using a gate insulating film. A channel layer and a gate insulating film are sequentially laminated on a substrate with a buffer layer therebetween. A gate electrode is formed on the gate insulating film. A source electrode and a drain electrode are disposed at the both sides of the gate electrode and are electrically connected to the channel layer via openings. The channel layer is formed from n-type GaN. The gate insulating film is made from AlN, which exhibits excellent insulation characteristics, thus increasing the Schottky barrier and achieving a large input amplitude. If the FET is operated in the enhancement mode, it is operable in a manner similar to a Si-MOS-type FET, resulting in the formation of an inversion layer.

REFERENCES:
patent: 4030942 (1977-06-01), Keenan et al.
patent: 4642879 (1987-02-01), Kawata et al.
patent: 5447874 (1995-09-01), Grivna et al.

Affiliated with

Also associated with

Rating

Field effect transistor with nitride compound does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor with nitride compound, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor with nitride compound will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-881580