Thin-film transistor

Details Thin-film transistor Thin-film transistor

1993-04-09

1994-05-17

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 66, 359 79, H01L 2701

Patent

active

053130758

ABSTRACT:
A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized, therefore, the reliability of the device is improved.

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patent: 4403239 (1983-09-01), Yamazaki
patent: 4451838 (1984-05-01), Yamazaki
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patent: 5060036 (1991-10-01), Choi
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Japanese Journal of Applied Physics, vol. 27, No. 11, Nov. 1988, pp. L2118-L2120, Tokyo, JP; T. Takeshita et al., "Study of ECR Hydrogen Plasma Treatment on Poly-Si Thin Film Transistors".

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