Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-10-24
1999-07-27
Breneman, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438719, 438725, 438723, 216 75, 216 79, 216 67, H01L 2100
Patent
active
059289635
ABSTRACT:
A contact hole is formed in an SiO.sub.2 film on a silicon wafer by a plasma etching, using a photoresist as a mask. A process gas is a mixture of an etching gas of HFPO and a carrier gas of Ar at a volume ratio of from 1:17.5 to 1:20. The process gas is fed into a process chamber which houses the silicon wafer and is set at a pressure of from 10 mTorr to 100 mTorr. The process gas is turned into plasma by electric discharge, and the SiO.sub.2 film is subjected to etching with the plasma. During the etching, the target surface of the wafer is kept at a temperature of from 50.degree. C. to 100.degree. C. The etching gas of HFPO is represented by a structural formula as follows: ##STR1##
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Alejandro Luz
Breneman R. Bruce
Tokyo Electron Limited
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