Photochemical vapor reaction apparatus

Details Photochemical vapor reaction apparatus Photochemical vapor reaction apparatus

1988-05-05

1990-12-04

Lawrence, Evan

Coating apparatus

Gas or vapor deposition

With treating means

118 501, C23C 1648

Patent

active

049745425

ABSTRACT:
A photochemical vapor reaction apparatus wherein a silicon film is deposited by photo-CVD. The photo-CVD is implemented by irradiating a reactive gas with ultraviolet rays which are emitted from a mercury lamp. The emission of the mercury lamp becomes continuous when the frequency of input power is 20 KHz or higher. By virtue of such a continuous light, the deposition is implemented uniformly and a close-packed and hard film can be formed.

REFERENCES:
patent: 4183780 (1980-01-01), McKenna et al.
patent: 4568632 (1986-02-01), Blum et al.
patent: 4718974 (1988-01-01), Minaee
patent: 4768464 (1988-09-01), Hayashi et al.

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