Coherent light generators – Particular active media – Semiconductor
Patent
1988-08-30
1989-11-07
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 46, H01S 319
Patent
active
048797251
ABSTRACT:
A semiconductor laser device comprises a p-type semiconductor substrate and a multi-layered crystal structure with an active layer for laser-oscillating operation, the multi-layered crystal structure being disposed on the substrate and having a striped channel area through which current is supplied to the active layer and a light-absorbing area positioned outside of the channeled area by which a difference between the amount of light to be absorbed inside of the channeled area and the amount of light to be absorbed outside of the channeled area is created, which causes a difference in the effective refractive index of the active layer, resulting in an optical waveguide in the active layer, wherein the light-absorbing area is constituted by an n-type semiconductor substance, but a portion of the n-type semiconductor substance positioned in the vicinity of at least one of both facets is replaced by a p-type semiconductor substance.
REFERENCES:
patent: 4730328 (1988-03-01), Miyauchi et al.
patent: 4769821 (1988-09-01), Gotoh
patent: 4791649 (1988-12-01), Yamamoto et al.
Hayashi Hiroshi
Kaneiwa Shinji
Kawanishi Hidenori
Morimoto Taiji
Yamaguchi Masahiro
Davie James W.
Sharp Kabushiki Kaisha
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