Method of manufacturing semiconductor device having multilayer i

Details Method of manufacturing semiconductor device having multilayer i Method of manufacturing semiconductor device having multilayer i

1993-01-26

1994-05-17

Quach, T. N.

Fishing, trapping, and vermin destroying

437190, 437194, 437946, 437195, H01L 21283

Patent

active

053127757

ABSTRACT:
A semiconductor device having a multilayer interconnection structure includes a tungsten plug buried in a contact hole formed in an interlayer insulating film covering first aluminum interconnection with a first titanium film and a first titanium nitride film interposed therebetween, and second aluminum interconnection formed thereon with a second titanium film and a second titanium nitride film interposed therebetween. According to this structure, remaining particles of an alterated layer of aluminum formed on the surface of the first aluminum interconnection are removed, and the first aluminum interconnection reacts with the first titanium film to form an intermetallic compound, so that mixing of the interface between them is carried out. Coverage of the contact hole is improved by burying the tungsten plug.

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Nishida et al., "Multilevel Interconnection for Half-Micron ULSI's", IEEE 1989 VMIC Conference, Jun. 12-13, 1989, pp. 19-25.
Fritsch et al., "A Submicron CMOS Two Level Metal Process with Planarization Techniques", IEEE 1988 VMIC Conference, Jun. 13-14, 1988, pp. 69-75.

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