Method for manufacturing a semiconductor device comprising titan

Details Method for manufacturing a semiconductor device comprising titan Method for manufacturing a semiconductor device comprising titan

1992-12-03

1994-05-17

Quach, T. N.

Fishing, trapping, and vermin destroying

437190, 437200, 427 97, 4271261, H01L 21285

Patent

active

053127749

ABSTRACT:
A method for manufacturing a semiconductor device comprising forming a titanium or titanium compound film by a CVD method which uses a material gas containing an organic titanium compound of the formula (I) ##STR1## wherein R is a hydrogen atom, a lower alkyl group, a C.sub.8-13 condensed polycyclic hydrocarbonyl group or a silyl group which is substituted with a lower alkyl and/or an aryl, and a reducing gas.

REFERENCES:
patent: 5080927 (1992-01-01), Ikeda et al.
patent: 5130172 (1992-07-01), Hicks et al.

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