Semiconductor laser

Details Semiconductor laser Semiconductor laser

1988-05-17

1989-11-07

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 48, H01S 319

Patent

active

048797243

ABSTRACT:
In a semiconductor laser, a substrate is composed of a semiconductor basement and a semiconductor current-blocking layer on the basement. A straight channel is grooved into the current-blocking-layer to reach the basement. The straight channel has a constant width and is composed of a shallow window-region-channels in the vicinity of the cavity mirrors and a deep gain-region-channel in the middle of the laser cavity. A first cladding layer is grown on the substrate. A semiconductor active layer is grown on the first cladding layer. A second cladding layer is grown on the active layer. A semiconductor ohmic contact layer is grown on the second cladding layer. A pair of electrodes is deposited on each of the upper and lower surfaces of the semiconductor laser device. A pair of cleaved facets is faced toward the direction perpendicular to the channel.

REFERENCES:
patent: 4545057 (1985-10-01), Hayakawa et al.
patent: 4546481 (1985-10-01), Yamamoto et al.
patent: 4639925 (1987-01-01), Kurihara et al.
IEICE Technical Report, Optical & Quantum Electronics (OQE); T. Morimoto et al., Jul. 15, 1986.
Appl. Phys. Letter 42(5) pp. 406-408; S. Yamamoto et al.; Mar. 1, 1983.
IEEE J. Quantum Electron. QE-23, pp. 730-737; P. Vankwikelberge et al.; Jun. 1987.

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