Uniform wafer heating by controlling light source and circumfere

Details Uniform wafer heating by controlling light source and circumfere Uniform wafer heating by controlling light source and circumfere

1982-11-30

1984-08-28

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576T, 148175, 148187, 219 85BA, 219 85BM, 427 55, H01L 21265, H01L 21324

Patent

active

044682590

ABSTRACT:
When heating a semiconductor wafer by means of application of radiated light, it is effective to employ subsidiary heating means whose temperature rises upon exposure to the radiated light so that the circumferential portion of the wafer is additionally heated to compensate radiation of heat therefrom. The subsidiary heating means is arranged to elongate along the circumference of the wafer. It is important to limit the ratio of the characteristics, whose definition will be given below, of the subsidiary heating means to that of the wafer to 0.6-1.4 in order to avoid the occurrence of such a damage as slip line or the like in the wafer. The characteristics are expressed by the following formula: ##EQU1## wherein .eta.: reflectivity;

REFERENCES:
patent: 3627590 (1971-12-01), Mammel
patent: 3723053 (1973-03-01), Myers et al.
patent: 4016006 (1977-04-01), Yoshinaka et al.
patent: 4101759 (1978-07-01), Anthony et al.
patent: 4113547 (1978-09-01), Katz et al.

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