Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1980-11-28

1982-05-04

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29589, 29590, 29591, 148175, 148187, 156662, 357 23, 357 51, H01L 2128, H01L 21302

Patent

active

043274765

ABSTRACT:
A method of manufacturing semiconductor devices is disclosed which comprises the steps of: forming at least one groove at a given location of a semiconductor substrate; laying an insulating film over the entire surface of the semiconductor substrate including the groove; depositing conductive material on the insulating layer to a thickness greater than half the width of an opening of the groove; and forming a MOS capacitor electrode of the conductor layer left in the groove by etching the deposited conductor layer until the insulating film other than its portion within the groove is exposed.

REFERENCES:
patent: 3911562 (1975-10-01), Youmans
patent: 3956033 (1976-05-01), Roberson
patent: 3975220 (1976-08-01), Quinn et al.
patent: 3975221 (1976-08-01), Rodgers
patent: 3998673 (1976-12-01), Chow
patent: 4075045 (1978-02-01), Rideout
patent: 4094057 (1978-06-01), Bhattacharyya et al.
patent: 4102714 (1978-07-01), DeBar et al.
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4125933 (1978-11-01), Baldwin et al.
patent: 4131983 (1979-01-01), Matzen
1978 IEEE International Solid-State Circuit Conference Digest of Technical Papers, p. 156, "VMOS Dynamic RAM", K. Hoffmann, R. Loshand, and K. Zarp.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-875805