Multiple gated light fired thyristor with non-critical light pip

Details Multiple gated light fired thyristor with non-critical light pip Multiple gated light fired thyristor with non-critical light pip

1978-07-27

1980-06-10

Clawson, Jr., Joseph E.

357 30, 357 68, 357 86, 350 9615, H01L 2974

Patent

active

042075831

ABSTRACT:
A radiation responsive thyristor device is provided with a relatively large radiation receiving region in which numerous interconnected emitter shorts are provided. A metalization pattern overlies the radiation receiving region. Openings in the metalization pattern admit incident radiation to the underlying semiconductor surface. The metalization pattern connects with an adjacent contact which may be either a main emitter electrode or an amplifying stage gate electrode. Light fibers carrying radiation of sufficient intensity to fire the thyristor are coupled at non-specific locations adjacent the radiation receiving region. At least some of the light fibers will supply incident radiation to the thyristor through the openings in the metalization pattern, producing substantially simultaneous thyristor turn-on at a plurality of separate locations.

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E. Schlegel et al., "A High Power Light Act. Thyrs.," Proc. IEEE, 1975, Int. Elec. Dev. Meet., pp. 483-486.
D. Silber et al., "Improved Gate Concept for Light Act. Pow. Thyrs.," 1975, Int. Elec. Dev. Meet. Conf. Rec., pp. 371-373.
J. Davis, "A Theoretical Model of Light-Fired Thyristors," IEEE Conf. Rec. of 1975, Pow. Engr. Spec. Conf., pp. 305-312.
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P. Debruyne et al., "Light Sensitive Struct. for High Volt. Thyristors," 1976, IEEE Conf. Rec. of Pow. Electr. Spec. Conf., pp. 262-266.

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