Integrated optoelectronic structures incorporating P-type and N-

Details Integrated optoelectronic structures incorporating P-type and N- Integrated optoelectronic structures incorporating P-type and N-

1996-09-30

1999-12-14

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 96, 257184, 257187, 257290, 257458, 257462, 257609, H01L 2906

Patent

active

06002142&

ABSTRACT:
Novel semiconductor devices are monolithically defined with p-type and/or n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneously forming the n-type and/or p-type layer disordered regions with sufficiently abrupt transitions from disordered to ordered material. The novel devices include laterally and vertically oriented P-i-N or N-i-P photodetectors integrated with laterally oriented P-N-P or N-P-N bipolar transistors, respectively, an N-P-N or P-N-P bipolar transistor monolithically integrated with an edge emitting semiconductor laser, and laterally and vertically oriented P-i-N or N-i-P photodetectors integrated with the monolithically integrated bipolar transistor and edge emitting semiconductor laser.

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