High power HFET with improved channel interfaces

Details High power HFET with improved channel interfaces High power HFET with improved channel interfaces

1996-09-12

1999-01-05

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Having graded composition

H01L 310328

Patent

active

058566848

ABSTRACT:
A high power heterojunction field effect transistor comprising a first barrier layer including a semiconductor material having a band gap, a second barrier layer including a semiconductor material having a band gap, a channel layer including a semiconductor material having a band gap narrower than the band gaps of the material included in the first barrier layer and the second barrier layer and sandwiched therebetween and an interface layer sandwiched between the channel layer and the first barrier layer.

REFERENCES:
patent: 5206527 (1993-04-01), Kuwada
patent: 5331410 (1994-07-01), Kuwada
patent: 5453631 (1995-09-01), Onda et al.

Affiliated with

Also associated with

Rating

High power HFET with improved channel interfaces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High power HFET with improved channel interfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High power HFET with improved channel interfaces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-865142