Pattern projection method with charged particle beam and charged

Details Pattern projection method with charged particle beam and charged Pattern projection method with charged particle beam and charged

1997-08-27

1999-01-05

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25049223, H01J 37304

Patent

active

058566775

ABSTRACT:
By causing a mask and a wafer to continuously move once or more and irradiating a plurality of small areas contained within a specific range of the mask in time sequence with a charged particle beam during each such continuous movement, the pattern in each small area is selectively projected onto a projection target area contained within a specific range of the wafer. The pattern to be projected onto one projection target area is divided and formed on a plurality of specific small areas contained within a specific range of the mask, and when the reduction ratio of the pattern projected from the mask onto the wafer is at 1/M, the continuous movement speed of the mask is set to be (N.times.M) times the continuous movement speed of the wafer (N being a real number larger than 1) and the charged particle beam to be conducted to the wafer is deflected in the direction of the continuous movement at a speed so that a relative speed of the pattern image which is projected onto the wafer and the wafer itself becomes substantially zero.

REFERENCES:
patent: 5079112 (1992-01-01), Berger
patent: 5130213 (1992-07-01), Berger
patent: 5166888 (1992-11-01), Engelke
patent: 5258246 (1993-11-01), Berger
patent: 5260151 (1993-11-01), Berger
patent: 5279925 (1994-01-01), Berger
patent: 5610406 (1997-03-01), Kai et al.

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