Aluminum nitride sintered body, metal embedded article, electron

Details Aluminum nitride sintered body, metal embedded article, electron Aluminum nitride sintered body, metal embedded article, electron

1997-03-25

1999-12-14

Marcheschi, Michael

Compositions: ceramic

Ceramic compositions

Refractory

501152, 279128, 361234, 428689, 428698, C04B 35581

Patent

active

060017600

ABSTRACT:
In AlN crystal grains constituting a sintered body, is contained: 150 ppm-0.5 wt. %, preferably at most 0.1 wt.%, of at least one rare earth element (as oxide thereof); at most 900 ppm, preferably at most 500 ppm of at least one metal impurity except rare earth elements; and preferably at least 0.5 wt. % of oxygen measured by an electron probe X-ray microanalyzer. The grains have an average grain diameter of preferably at least 3.0 .mu.m and show a main peak in the wavelength range of 350-370 nm of spectrum obtained by a cathode luminescence method. The sintered body composed of AlN crystal grains has a volume resistivity at room temperature of at most 1.0.times.10.sup.12 .OMEGA..multidot.cm.

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Hiroaki Ohya and Jun Yamauchi: "Electron Spin Resonance" published by Kodansha Co., Ltd. (no date).

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