Phase shift mask and method for manufacturing same

Details Phase shift mask and method for manufacturing same Phase shift mask and method for manufacturing same

1997-01-23

1999-01-05

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

058560491

ABSTRACT:
A phase shift mask device includes a transparent substrate; a first rim type part on the transparent substrate, the first rim type mask part including a first phase shift layer, a second phase shift layer adjacent the first phase shift layer, and a light transparent portion adjacent the second phase shift layer; a first outrigger type mask part on the transparent substrate spaced from the first rim type mask part by a first distance, the first outrigger type mask part including a first phase shift layer, a second phase shift layer adjacent the first phase shift layer, a shielding layer adjacent the first phase shift layer, and a light transparent portion adjacent the second phase shift layer; a second rim type mask part on the transparent substrate having a diagonal relationship with respect to the first rim type mask, the second rim type mask part including a first phase shift layer, a second phase shift layer adjacent the first phase shift layer, and a light transparent layer portion adjacent the second phase shift layer; and a second outrigger type mask part on the transparent substrate having a diagonal relationship with respect to the first outrigger type mask part, the second outrigger type mask part including a first phase shift layer, a second phase shift layer adjacent the first phase shift layer, a shielding layer adjacent the first phase shift layer, and a light transparent portion adjacent the second phase shift layer.

REFERENCES:
patent: 5286581 (1994-02-01), Lee
patent: 5362584 (1994-11-01), Brock et al.
patent: 5484672 (1996-01-01), Bajuk et al.
Richard A. Ferguson et al., "Impact of Attenuated Mask Topography on Lithographic Performance", SPIE, vol. 2197 (1994), pp. 130-139.
Emi Tamechika et al., "Resolution Improvement Using Auxiliary Pattern Groups in Oblique Illumination Lithography", Jpn. J. Appl. Phys, vol. 32, (1993), pp. 5856-5862.
Marc D. Levenson et al., "Improving Resolution in Photolithography with a Phase-Shifting Mask", IEEE Transactions on Electron Devices, vol. ED-29, No. 12, (Dec. 1982), pp. 1828-1836.
Burn J. Lin, "The Attenuated Phase-Shifting Mask", Solid State Technology, (Jan. 1992), Abstract.

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