Semiconductor device with isolation between MOSFET and control c

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 42, 357 41, 357 48, H01L 2702

Patent

active

048795844

ABSTRACT:
A semiconductor device is provided which has a power insulated-gate MOS field effect transistor and a control semiconductor element formed in a common semiconductor substrate. A first area corresponding to a drain region of low resistance in the power MOS field effect transistor is different in resistivity than a second area corresponding to the control semiconductor element. The electrical characteristics of each element integrated in the devices is substantially equal to the same element in discrete form.

REFERENCES:
patent: 4046605 (1977-09-01), Nelson et al.
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4546370 (1985-10-01), Curran
patent: 4609413 (1986-09-01), Boland
Fischetti, "Solid State", IEEE Spectrum, vol. 22, No. 1, Jan. 1985, pp. 60-64.
Sutor et al., "A Novel Isolation Structure for SMARTpower ICs," IEDM, pp. 214-217, Dec. 9, 1986.
Schultz et al., "Mixed MOS Devices Unite in a Switch Chip that Links Power with Smarts," Electronic Design, No. 4, pp. 191-196, Feb. 1985.
Patent Abstracts of Japan, vol. 8, No. 53, (E-231) [1490], 3/9/84 & JP-A-58 206 153, (Daini Seikosha K.K.), Jan. 12, 1983.
Fischetti, "In Smarter Design and Fabrication of ICs, Power and Logic are Mixed on the Same Chip and Circuits are Integrated Over an Entire Wafer," IEEE Spectrum, No. 1, pp. 60-64, Jan. 1985.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device with isolation between MOSFET and control c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with isolation between MOSFET and control c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with isolation between MOSFET and control c will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-86054

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.