Field-effect transistor

Details Field-effect transistor Field-effect transistor

1987-06-23

1989-11-07

Clawson, Jr., Joseph E.

357 234, 357 2314, 357 59, 357 71, H01L 2978

Patent

active

048795828

ABSTRACT:
A field-effect transistor wherein a gate electrode conductive layer is connected in parallel to a plurality of conductive layers having a lower resistivity than the gate electrode conductive layer, so that the gate resistance is reduced to provide a high power output and a noise reduction.

REFERENCES:
patent: 4141023 (1979-02-01), Yamada
patent: 4162506 (1979-07-01), Takei
patent: 4462041 (1984-07-01), Glenn
patent: 4707723 (1987-11-01), Okamoto et al.
patent: 4716446 (1987-12-01), Esser et al.

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