Method of fabricating a semiconductor device with a thinned subs

Details Method of fabricating a semiconductor device with a thinned subs Method of fabricating a semiconductor device with a thinned subs

1998-04-03

1999-08-03

Brown, Peter Toby

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

438459, 438977, H01L 2158

Patent

active

059337508

ABSTRACT:
A method of fabricating a semiconductor device on thinned wide bandgap material including providing a support having a planar surface and a semiconductor substrate. Implanting a layer of ions in the substrate to create a layer of microbubbles defining a thin film having a planar surface and a remaining mass separated by the layer of implanted ions. Intimately contacting the planar surface of the thin film to the planar surface of the support and heating the support and substrate to separate the remaining mass from the thin film. A semiconductor device is formed on the thin film, and the support is thinned.

REFERENCES:
patent: 4601779 (1986-07-01), Abernathey et al.
patent: 4983251 (1991-01-01), Haisma et al.
patent: 5229305 (1993-07-01), Baker
patent: 5256581 (1993-10-01), Foerstner et al.
patent: 5294814 (1994-03-01), Das
patent: 5374564 (1994-12-01), Bruel
patent: 5449930 (1995-09-01), Zhou
patent: 5494835 (1996-02-01), Bruel
patent: 5661333 (1997-08-01), Bruel et al.
patent: 5728624 (1998-03-01), Linn et al.
patent: 5801073 (1998-09-01), Robbins et al.
patent: 5804086 (1998-09-01), Bruel
patent: 5863830 (1999-01-01), Bruel et al.

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