Tunneling emitter bipolar transistor

Details Tunneling emitter bipolar transistor Tunneling emitter bipolar transistor

1988-06-06

1989-07-04

Carroll, J.

357 4, 357 7, 357 16, 357 61, H01L 2712, H01L 29161, H01L 2972

Patent

active

048455415

ABSTRACT:
A bipolar transistor has a barrier layer interposed between its base and its emitter. The barrier layer is formed of a different, wider band gap, semiconductor material than the base and the emitter and has the same conductivity type as the emitter. The barrier layer exhibits a large difference in the effective electron mass and the effective whole mass, and presents a small barrier to majority carriers. The tunneling emitter bipolar transistor exhibits a comparable current gain while having better temperature stability, less light sensitivity, and a much lower emitter resistance (leading to a much higher cut-off frequency) than conventional heterojunction bipolar transistors.

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