Vertical MOSFET device having protector

Details Vertical MOSFET device having protector Vertical MOSFET device having protector

1989-01-04

1990-10-16

James, Andrew J.

357 2313, 357 59, 357 15, H01

Patent

active

049639706

ABSTRACT:
A vertical MOSFET device including a semiconductor layer having a first conductivity type, in which a base region having a second conductivity type is formed in the semiconductor layer, and a source region having the first conductivity type is formed in the base region, in which a gate electrode is formed at least on the above described base region via an insulating gate film to form a channel between the semiconductor layer and the source region, and a protector having PN or Schottky junction, which is formed between the source region and the gate electrode and is thermally contacted with at least one of the other members.

REFERENCES:
patent: 4492974 (1985-01-01), Yoshida et al.

Affiliated with

Also associated with

Rating

Vertical MOSFET device having protector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical MOSFET device having protector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical MOSFET device having protector will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-853774